Dry etching system having buffer room

专利摘要:
The present invention provides a dry etching system capable of maintaining a uniform gas flow in a chamber. That is, a chamber in which a dry etching process is performed, comprising: a chamber having an inlet through which a reaction gas is supplied to one side and an outlet including a reaction gas after the dry etching process on the other side opposite to the inlet; A vacuum pump connected to an outlet of the chamber to vacuum the chamber, discharge a residue including a reaction gas after a dry etching process, and guide a flow of the reaction gas in the chamber; And a buffer chamber connected between the chamber and the vacuum pump to provide a predetermined space to uniformly flow the reaction gas in the chamber.
公开号:KR20030000815A
申请号:KR1020010036956
申请日:2001-06-27
公开日:2003-01-06
发明作者:정용준
申请人:삼성전자 주식회사；
IPC主号:

专利说明:

Dry etching system having a buffer room
[15] The present invention relates to a dry etching system, and more particularly to a dry etching system having a buffer chamber to minimize the pressure change in the chamber to uniform the flow of gas.
[16] In the semiconductor manufacturing process, etching is a process of forming a semiconductor integrated circuit on a wafer, and is a process of selectively removing the film quality under the photosensitive film pattern by using the photosensitive film pattern formed by the photolithography process as a mask. Etching can be classified into two types, wet etching and dry etching. Wet etching is generally used for integrated circuit devices having a minimum line width of several to several tens of micrometers. Therefore, it is rarely used in recent years.
[17] In order to overcome these limitations, dry etching technology is emerging, and dry etching technology uses a plasma to remove a processed material such as a wafer by active reaction (radical) in a plasma state, and accelerates ions physically. Removal method or a combination of both methods is a generic term.
[18] As shown in FIG. 1, the dry etching system 10 includes a chamber 12 through which a dry etching process is performed, and a reaction gas 61 supplied to an inlet 11 of the chamber 12. A plurality of vacuum pumps 14, 16 connected to RF power 15, an anode (not shown) and a cathode 13, which are converted into plasma 63, and an outlet 19 of the chamber; vacuum pump). That is, in the dry etching, the reaction gas 61 is decomposed by applying an RF field into the chamber in a vacuum state, and an etching process is performed on the wafer 60 using radicals or ions formed at this time.
[19] The vacuum pumps 14 and 16 are means for bringing the chamber 12 into a vacuum state, and discharge the reaction gas 61 and the plasma 63 remaining in the chamber 12 out of the chamber 12. It is also responsible for maintaining the flow of the reaction gas 61 uniformly in the chamber 12. In particular, in order to suppress fluctuation of the flow of the reaction gas 61 during the dry etching process and to improve pumping capability, an outlet 19 of the chamber 12 has a large instantaneous pump called a turbo pump 14. It is connected. At the rear of the turbo pump 14, a dry pump 16 is connected.
[20] However, when the reaction gas 61 is supplied to the inlet 11 of the chamber to proceed with the initial dry process, and when the supply of the reaction gas 61 is stopped to stop the process, the outlet 19 of the chamber When the pumping process is performed in the connected turbo pump 14, a large amount of reaction gas 61 is sucked from the front end of the turbo pump 14 and the pressure in the chamber 12 is shaken to uniformly flow the reaction gas 61. You won't be able to. Thus, a metal bridge is formed in the chamber 12 where unstable polymers are fatal defects in the wafer 60. In addition, the vacuum pumps 14 and 16 may be overloaded due to an instantaneous pressure change.
[21] Accordingly, an object of the present invention is to provide a dry etching system capable of maintaining a uniform gas flow in a chamber.
[1] 1 is a block diagram showing a dry etching system according to the prior art,
[2] 2 is a block diagram showing a dry etching system having a buffer chamber according to a first embodiment of the present invention;
[3] 3 is a block diagram showing a dry etching system having a buffer chamber according to a second embodiment of the present invention;
[4] 4 is a block diagram showing a dry etching system having a buffer chamber according to a third embodiment of the present invention;
[5] 5 is a block diagram illustrating a dry etching system having a buffer chamber according to a fourth exemplary embodiment of the present invention.
[6] Description of the main parts of the drawing
[7] 10, 20, 30, 40, 50: dry etching system
[8] 12, 22, 32, 42, 52: chamber
[9] 14, 24, 34, 44, 54: turbo pump
[10] 16, 26, 36, 46: dry pump
[11] 28, 38, 48, 58: buffer chamber
[12] 60 wafer
[13] 61: reaction gas
[14] 63: plasma
[22] In order to achieve the above object, a dry etching system, a chamber in which a dry etching process is performed, a residue including an inlet through which a reaction gas is supplied on one side and a reaction gas after the dry etching process on the other side opposite to the inlet is discharged A chamber having an outlet; A vacuum pump connected to an outlet of the chamber to vacuum the chamber, discharge a residue including a reaction gas after a dry etching process, and guide a flow of the reaction gas in the chamber; And a buffer chamber connected between the chamber and the vacuum pump to provide a predetermined space to uniformly flow the reaction gas in the chamber.
[23] In a preferred embodiment of the invention, the buffer chamber is preferably formed between the outlet of the chamber and the vacuum pump.
[24] In another preferred embodiment of the present invention, the buffer chamber is preferably formed by extending the space at the outlet side of the chamber.
[25] The vacuum pump according to the present invention includes a turbo pump connected to the outlet side of the chamber and a dry pump connected to the rear of the turbo pump, and may connect a buffer chamber having a predetermined space between the turbo pump and the dry pump. have.
[26] Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention.
[27] 2 is a block diagram showing a dry etching system 20 having a buffer chamber 28 according to a first embodiment of the present invention. Referring to FIG. 2, the dry etching system 20 according to the first embodiment includes a chamber 22 through which a dry etching process is performed, and a reaction gas 61 installed in the chamber 22 and supplied into the chamber 22. RF power 25, anode and cathode 23 for converting the plasma 63 into plasma 63, and vacuum pumps 24 and 26 connected to the outlet 29 of the chamber. The vacuum pumps 24, 26 consist of a turbo pump 24 connected to the outlet 29 of the chamber and a dry pump 26 connected to the rear of the turbo pump 24. That is, dry etching is a volatile material by reacting a material deposited on the wafer 60 with a reactive material such as ions or radicals made from plasma 63 formed under the conditions of vacuum, reaction gas 61 and RF power 25. The etching process is performed using the changing phenomenon.
[28] In particular, the dry etching system 20 according to the first embodiment of the present invention is provided between the outlet 29 of the chamber and the turbo pump 24 so as to uniformly flow the reaction gas 61 in the chamber 22. A buffer room 28 having a predetermined space is connected to the buffer room 28. The buffer chamber 28 provides a space for buffering the pressure of the reaction gas 61 which is momentarily pushed into the turbo pump 24 from the outlet 29 of the chamber.
[29] That is, when the reaction gas is supplied to the inlet of the chamber for the first dry process, and when the supply of the reaction gas is stopped to stop the process, conventionally, when the pumping process is performed in the turbo pump connected to the outlet of the chamber At the front of the pump, a large amount of reaction gas is sucked in at a moment, and the pressure in the chamber is shaken, resulting in an uneven flow of the reaction gas. However, in the present invention, since the buffer chamber 28 is formed between the outlet 29 of the chamber and the turbo pump 24, the buffer chamber 28 replaces the change in pressure that may be generated in the chamber 22. The flow of the reaction gas 61 in the chamber 22 can be maintained uniformly.
[30] Therefore, when the buffer chamber 28 of a predetermined space is provided between the chamber 22 and the vacuum pumps 24 and 26, the flow of the reaction gas 61 in the chamber 22 can be maintained uniformly.
[31] On the other hand, the size of the space of the buffer chamber 28 is preferably formed in accordance with the capacity of the chamber 22 and the vacuum pump 24,26.
[32] In the first embodiment of the present invention, the buffer chamber 28 is formed between the outlet 29 of the chamber and the turbo pump 24, but various modifications are possible.
[33] That is, referring to FIG. 3, the dry etching system 30 according to the second embodiment extends the space toward the outlet 39 of the chamber to provide the buffer chamber 38. Referring to FIG. 4, in the dry etching system 40 according to the third embodiment, a buffer chamber 48 is formed between the turbo pump 44 and the dry pump 46. At this time, the buffer chamber 48 is also responsible for preventing the backflow of the reaction gas. 5, in the dry etching system 50 according to the fourth embodiment, a first buffer chamber 58a is formed between an outlet 59 of a chamber and a turbo pump 54, and a turbo pump ( The second buffer chamber 58b is formed between 54 and the dry pump 56. In addition, in the dry etching system 30 according to the second embodiment of FIG. 3, a separate buffer chamber may be formed in the turbo pump and the dry pump.
[34] Therefore, in order to maintain a uniform flow of the reaction gas in the chamber, it is within the scope of the technical idea of the present invention to form a buffer chamber of a predetermined space between the chamber and the vacuum pump.
[35] On the other hand, the embodiments of the present invention disclosed in the specification and drawings are merely presented specific examples to aid understanding and are not intended to limit the scope of the present invention. In addition to the embodiments disclosed herein, it is apparent to those skilled in the art that other modifications based on the technical idea of the present invention may be implemented.
[36] Therefore, according to the structure of the present invention, by forming a buffer chamber of a predetermined space between the chamber and the vacuum pump, it is possible to maintain a uniform flow of the reaction gas in the chamber. In addition, since the flow of the reaction gas in the chamber can be made uniform, the generation of particles in the chamber can be minimized.
[37] In addition, the buffer chamber also has an advantage of preventing overload of the vacuum pump due to the instantaneous pressure change.

权利要求:
Claims (4)
[1" claim-type="Currently amended] With dry etching system,
A chamber in which a dry etching process is performed, comprising: a chamber having an inlet through which a reaction gas is supplied to one side and an outlet through which a residue including a reaction gas after the dry etching process is discharged to the other side opposite to the inlet;
A vacuum pump connected to an outlet of the chamber to vacuum the chamber, discharge a residue including a reaction gas after a dry etching process, and guide a flow of the reaction gas in the chamber; And
And a buffer chamber connected between the chamber and the vacuum pump to provide a predetermined space to uniformly flow the reaction gas in the chamber.
[2" claim-type="Currently amended] The dry etching system of claim 1, wherein the buffer chamber is formed between an outlet of the chamber and a vacuum pump.
[3" claim-type="Currently amended] The dry etching system of claim 1, wherein the buffer chamber is formed by extending a space at an outlet side of the chamber.
[4" claim-type="Currently amended] The method of claim 1 or 2, wherein the vacuum pump,
A turbo pump connected to the outlet side of the chamber;
Includes; a dry pump connected to the rear of the turbo pump,
Dry buffer system having a buffer chamber, characterized in that the buffer chamber having a predetermined space is connected between the turbo pump and the dry pump.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2001-06-27|Application filed by 삼성전자 주식회사

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2001-06-27|Priority to KR1020010036956A

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2003-01-06|Publication of KR20030000815A

优先权:

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申请号 | 申请日 | 专利标题

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KR1020010036956A|KR20030000815A|2001-06-27|2001-06-27|Dry etching system having buffer room|